Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Detaylı Bibliyografya
Asıl Yazarlar:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Diğer Yazarlar:	Bhuian, Dr. Mohammed Belal Hossain
Materyal Türü:	Tez
Dil:	English
Baskı/Yayın Bilgisi:	BRAC University 2015
Konular:	Electrical and electronic engineering Simulation
Online Erişim:	http://hdl.handle.net/10361/4330

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