Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Bibliografiska uppgifter
Huvudupphovsmän:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Övriga upphovsmän:	Bhuian, Dr. Mohammed Belal Hossain
Materialtyp:	Lärdomsprov
Språk:	English
Publicerad:	BRAC University 2015
Ämnen:	Electrical and electronic engineering Simulation
Länkar:	http://hdl.handle.net/10361/4330

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