Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Библиографические подробности
Главные авторы:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Другие авторы:	Bhuian, Dr. Mohammed Belal Hossain
Формат:	Диссертация
Язык:	English
Опубликовано:	BRAC University 2015
Предметы:	Electrical and electronic engineering Simulation
Online-ссылка:	http://hdl.handle.net/10361/4330

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