Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Bibliografische gegevens
Hoofdauteurs:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Andere auteurs:	Bhuian, Dr. Mohammed Belal Hossain
Formaat:	Thesis
Taal:	English
Gepubliceerd in:	BRAC University 2015
Onderwerpen:	Electrical and electronic engineering Simulation
Online toegang:	http://hdl.handle.net/10361/4330

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