Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

書誌詳細
主要な著者:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
その他の著者:	Bhuian, Dr. Mohammed Belal Hossain
フォーマット:	学位論文
言語:	English
出版事項:	BRAC University 2015
主題:	Electrical and electronic engineering Simulation
オンライン･アクセス:	http://hdl.handle.net/10361/4330

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