Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

מידע ביבליוגרפי
Main Authors:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
מחברים אחרים:	Bhuian, Dr. Mohammed Belal Hossain
פורמט:	Thesis
שפה:	English
יצא לאור:	BRAC University 2015
נושאים:	Electrical and electronic engineering Simulation
גישה מקוונת:	http://hdl.handle.net/10361/4330

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