Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Détails bibliographiques
Auteurs principaux:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Autres auteurs:	Bhuian, Dr. Mohammed Belal Hossain
Format:	Thèse
Langue:	English
Publié:	BRAC University 2015
Sujets:	Electrical and electronic engineering Simulation
Accès en ligne:	http://hdl.handle.net/10361/4330

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