Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Xehetasun bibliografikoak
Egile Nagusiak:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Beste egile batzuk:	Bhuian, Dr. Mohammed Belal Hossain
Formatua:	Thesis
Hizkuntza:	English
Argitaratua:	BRAC University 2015
Gaiak:	Electrical and electronic engineering Simulation
Sarrera elektronikoa:	http://hdl.handle.net/10361/4330

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