Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Detalles Bibliográficos
Autores principales: Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Otros Autores: Bhuian, Dr. Mohammed Belal Hossain
Formato: Tesis
Lenguaje:English
Publicado: BRAC University 2015
Materias:
Electrical and electronic engineering
Simulation
Acceso en línea:http://hdl.handle.net/10361/4330

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