Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Bibliographic Details
Main Authors:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Other Authors:	Bhuian, Dr. Mohammed Belal Hossain
Format:	Thesis
Language:	English
Published:	BRAC University 2015
Subjects:	Electrical and electronic engineering Simulation
Online Access:	http://hdl.handle.net/10361/4330

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