Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Bibliografiske detaljer
Main Authors:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Andre forfattere:	Bhuian, Dr. Mohammed Belal Hossain
Format:	Thesis
Sprog:	English
Udgivet:	BRAC University 2015
Fag:	Electrical and electronic engineering Simulation
Online adgang:	http://hdl.handle.net/10361/4330

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