Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Opis bibliograficzny
Główni autorzy:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Kolejni autorzy:	Bhuian, Dr. Mohammed Belal Hossain
Format:	Praca dyplomowa
Język:	English
Wydane:	BRAC University 2015
Hasła przedmiotowe:	Electrical and electronic engineering Simulation
Dostęp online:	http://hdl.handle.net/10361/4330

Podobne zapisy

Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures
od: Ahsan, Md. Galib
Wydane: (2016)

Optical and Digital Gallium Arsenide Technologies for Signal Processing Applications

High Mobility and Quantum Well Transistors
od: Hellings
Wydane: (2013)

Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
od: Afsin, Muntasirul Haque, i wsp.
Wydane: (2017)

Microwave Integrated Circuit Conference (EuMIC), European (Formerly European Gallium Arsenide and Other Semiconductors Application Symposium - EGASS)

Thinking in systems : a primer /
od: Meadows, Donella H.
Wydane: (2008)

Computer simulation applications : an introduction /
od: Whicker, Marcia Lynn
Wydane: (1991)

Discrete-event system simulation /
Wydane: (2007)

Organic Field Effect Transistors

Indium Phosphide and Related Materials Conference,

Mathematical model and stability analysis of electric vehicle
od: Talukder, Srijon, i wsp.
Wydane: (2017)

Modeling and simulating communication networks : a hands-on approach using OPNET /
od: Katzela, Irene
Wydane: (1999)

Simulation /
od: Ross, Sheldon M.
Wydane: (2023)

Generating near-field fresnel diffraction patterns by iterative fresnel integrals method: a computer simulation approach
od: Abedin, Kazi Monowar, i wsp.
Wydane: (2017)

Mathematical modeling and simulation : introduction for scientists and engineers /
od: Velten, Kai
Wydane: (2009)

Fundamentals of Nanoscaled Field Effect Transistors
od: Chaudhry
Wydane: (2013)

Organic Field-Effect Transistors XV

Organic Field-Effect Transistors IX

Organic Field-Effect Transistors XVII

Organic Field-Effect Transistors III

Organic Field-Effect Transistors IV

Organic Field-Effect Transistors V

Organic Field-Effect Transistors VIII

Organic Field-Effect Transistors XVI

Organic Field-Effect Transistors XI

Organic Field-Effect Transistors X

Organic Field Effect Transistors II

Organic Field-Effect Transistors VI

Optical Fiber and Planar Waveguide Technology

Performance analysis of multicarrier code division multiple access over rayleigh fading channel
od: Uddin, Jia, i wsp.
Wydane: (2016)

Player's manual for use with the business strategy game : a global industry simulation /
od: Thompson, Arthur A.

Gallium Nitride Materials and Devices

Computer simulation of Fresnel diffraction from rectangular apertures and obstacles using the Fresnel integrals approach
od: Abedin, Kazi Monowar, i wsp.
Wydane: (2017)

Multimodal emotion recognition from Speech and text using heterogeneous ensemble techniques
od: Rafidul Islam, Sheikh Md, i wsp.
Wydane: (2022)

Organic and Hybrid Field-Effect Transistors XIX

Organic and Hybrid Field-Effect Transistors XXI

Organic and Hybrid Field-Effect Transistors XX

Organic and Hybrid Field-Effect Transistors XVIII

Characterization of Carbon Nanotube field effect transistor
od: Khan, Sabbir Ahmed, i wsp.
Wydane: (2013)

Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors
od: Ahsan, Mehdi, i wsp.
Wydane: (2016)