Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.
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| Język: | English |
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BRAC University
2015
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| Dostęp online: | http://hdl.handle.net/10361/4330 |
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10361-43302019-09-30T04:17:34Z Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors Haque, Tausif Omar Shifain, Joyoti Mallick, Protim Islam, Md. Rizwanul Bhuian, Dr. Mohammed Belal Hossain Saha, Atanu Kumar Department of Electrical and Electronic Engineering, BRAC University Electrical and electronic engineering Simulation This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015. Cataloged from PDF version of thesis report. Includes bibliographical references (page 47-48). QWFETs with non-planar, multigate structures are known to provide higher electrostatistics than their conventional planar counterparts. Due to this desirable feature of the non-planar, multigate architecture, the electronics community is leaning towards transistors having gates wrapped around the channel for higher scalability and performance. In this work, 2-D Schrodinger-Poisson coupled simulations of non-planar, multigate InGaAs QWFETs were carried out using an in-house simulator to study the performance of the devices based on the C-V characteristics. The simulator was carefully benchmarked to evaluate its accuracy before carrying out the simulations. Two InGaAs QWFETs with InAlAs spacer layers were simulated. The first device had a plain InAlAs spacer layer and the second device contained a Si δ-doped layer between InAlAs spacer layer. The simulation results showed that the device with the plain InAlAs spacer layer had a threshold voltage of 0.3V and C-V characteristics similar to that of a device with an InP spacer layer which was used for benchmarking. The second device which contained a thin Si δ-doped layer within the InAlAs spacer layer was simulated next. From the simulation results, it was seen that the device had a threshold voltage of 0.2V and an effective improvement in C-V characteristics was also observed compared to the device with plain InAlAs layer. Tausif Omar Haque Joyoti Shifain Protim Mallick Md. Rizwanul Islam B. Electrical and Electronic Engineering 2015-09-01T07:10:28Z 2015-09-01T07:10:28Z 2015 2015-07 Thesis ID 11221030 ID 11221004 ID 11221025 ID 11221020 http://hdl.handle.net/10361/4330 en BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 48 pages application/pdf BRAC University |
| institution |
Brac University |
| collection |
Institutional Repository |
| language |
English |
| topic |
Electrical and electronic engineering Simulation |
| spellingShingle |
Electrical and electronic engineering Simulation Haque, Tausif Omar Shifain, Joyoti Mallick, Protim Islam, Md. Rizwanul Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors |
| description |
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015. |
| author2 |
Bhuian, Dr. Mohammed Belal Hossain |
| author_facet |
Bhuian, Dr. Mohammed Belal Hossain Haque, Tausif Omar Shifain, Joyoti Mallick, Protim Islam, Md. Rizwanul |
| format |
Thesis |
| author |
Haque, Tausif Omar Shifain, Joyoti Mallick, Protim Islam, Md. Rizwanul |
| author_sort |
Haque, Tausif Omar |
| title |
Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors |
| title_short |
Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors |
| title_full |
Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors |
| title_fullStr |
Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors |
| title_full_unstemmed |
Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors |
| title_sort |
simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors |
| publisher |
BRAC University |
| publishDate |
2015 |
| url |
http://hdl.handle.net/10361/4330 |
| work_keys_str_mv |
AT haquetausifomar simulationbasedstudyofnonplanarmultigateindiumgalliumarsenidequantumwellfieldeffecttransistors AT shifainjoyoti simulationbasedstudyofnonplanarmultigateindiumgalliumarsenidequantumwellfieldeffecttransistors AT mallickprotim simulationbasedstudyofnonplanarmultigateindiumgalliumarsenidequantumwellfieldeffecttransistors AT islammdrizwanul simulationbasedstudyofnonplanarmultigateindiumgalliumarsenidequantumwellfieldeffecttransistors |
| _version_ |
1814306898792415232 |