Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2013.

Bibliographic Details
Main Authors:	Rouf, Nirjhor Tahmidur, Deep, Ashfaqul Haq, Hassan, Rusafa Binte
Other Authors:	Mominuzzaman, Sharif Mohammad
Format:	Thesis
Language:	English
Published:	BRAC University 2014
Subjects:	Electrical and electronic engineering
Online Access:	http://hdl.handle.net/10361/2937

id	10361-2937
record_format	dspace
spelling	10361-29372019-09-30T04:16:43Z Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction Rouf, Nirjhor Tahmidur Deep, Ashfaqul Haq Hassan, Rusafa Binte Mominuzzaman, Sharif Mohammad Department of Electrical and Electronic Engineering, BRAC University Electrical and electronic engineering This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2013. Cataloged from PDF version of thesis report. Includes bibliographical references (page 103-112). The need for technological advancement in the field of electronics has been ever increasing. Till now silicon has been the prime material of choice for meeting the current demands. However, silicon has its own limitations; Silicon based integrated circuits and the scaling of silicon MOSFET design faces complications like tunneling effect, gate oxide thickness effect etc. which has given the scope for new materials to emerge. The growing academic interest in carbon nanotubes (CNT) as a promising novel class of electronic material has led to significant progress in the understanding of CNT physics including ballistic and non-ballistic electron transport characteristics. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Non-ballistic CNT transistors have been considered, and extended circuit-level models which can capture both ballistic and non-ballistic electron transport phenomenon, including elastic, phonon scattering, strain and tunneling effects, have been developed. The purpose of this paper is to establish a comparative analysis of the transport characteristics of ballistic and non-ballistic carbon nanotubes. The simulation is carried out using MATLAB and the main focus is on the changes in the I-V characteristic curves of elastic scattering effect, bandgap strain effect, tunneling effect and the overall combined effect, varying the parameters such as gate oxide thickness, temperature, dielectric constant, and chirality. The obtained results were then compared to their respective ballistic results. We verified our work by further comparison of our findings with other established academic papers published under the same category. Nirjhor Tahmidur Rouf Ashfaqul Haq Deep Rusafa Binte Hassan B. Electrical and Electronic Engineering 2014-02-16T10:29:15Z 2014-02-16T10:29:15Z 2013 2013-09 Thesis ID 10121002 ID 10121024 ID 10221077 http://hdl.handle.net/10361/2937 en BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 154 pages application/pdf BRAC University
institution	Brac University
collection	Institutional Repository
language	English
topic	Electrical and electronic engineering
spellingShingle	Electrical and electronic engineering Rouf, Nirjhor Tahmidur Deep, Ashfaqul Haq Hassan, Rusafa Binte Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction
description	This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2013.
author2	Mominuzzaman, Sharif Mohammad
author_facet	Mominuzzaman, Sharif Mohammad Rouf, Nirjhor Tahmidur Deep, Ashfaqul Haq Hassan, Rusafa Binte
format	Thesis
author	Rouf, Nirjhor Tahmidur Deep, Ashfaqul Haq Hassan, Rusafa Binte
author_sort	Rouf, Nirjhor Tahmidur
title	Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction
title_short	Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction
title_full	Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction
title_fullStr	Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction
title_full_unstemmed	Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction
title_sort	current-voltage characteristics of carbon nanotube field effect transistor considering non-ballistic conduction
publisher	BRAC University
publishDate	2014
url	http://hdl.handle.net/10361/2937
work_keys_str_mv	AT roufnirjhortahmidur currentvoltagecharacteristicsofcarbonnanotubefieldeffecttransistorconsideringnonballisticconduction AT deepashfaqulhaq currentvoltagecharacteristicsofcarbonnanotubefieldeffecttransistorconsideringnonballisticconduction AT hassanrusafabinte currentvoltagecharacteristicsofcarbonnanotubefieldeffecttransistorconsideringnonballisticconduction
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Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction

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