Characterization of Carbon Nanotube field effect transistor
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2012.
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BRAC University
2013
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| 在线阅读: | http://hdl.handle.net/10361/2334 |
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10361-23342019-09-29T05:43:02Z Characterization of Carbon Nanotube field effect transistor Khan, Sabbir Ahmed Hasan, Mahmudul Mominuzzaman, Sharif Mohammad Department of Electrical and Electronic Engineering, BRAC University Carbon Nanotube Electrical and electronic engineering This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2012. Cataloged from PDF version of thesis report. Includes bibliographical references (page 55). From the concept of material science, any materials haying an individual structure And characteristics have their own limitations. Due to the call for technological advancement, silicon-based integrated circuits and the scaling of’ silicon MOSFET design faces highcomplications like tunneling effect, short channel effect, gate oxide thickness effect etc. To solve these problems, new material alternatives are needed with such characteristics. Recently, carbon nanotube has caught the attentions with promising future to replace silicon-based materials due to its superior electrical properties and characteristics. Simulation studies of carbon nanotube field-effect transistors ((CNFETs) are presented using models of increasing rigor and versatility that have been systematically developed. The studies and modeling of carbon nanotube, which includes band structures and current-voltage graphical plots, are covered in this thesis Also, analysis has been made to see the effect of gate oxide thickness change, temperature change, dielectric constant change, gate control coefficient, drain control coefficient and chirality changing effect on the device performance, in particular on the drain current. "The purpose of this paper is to study the behavior of CNFET and the twain focus is on the simulation of its current.-voltage (I-V) characteristic and observes the parameter changing effect on it. The simulation study is carried out using MATLAB program and the result obtained is used to compare the device performance with MOSFET. Resides, further analysis has been done through the comparison of' the simulation result of the other groups to justify ' result. Sabbir Ahmed Khan Mahmudul Hasan B. Electrical and Electronic Engineering 2013-04-22T07:29:50Z 2013-04-22T07:29:50Z 2012 2012-09-04 Thesis ID 09221159 ID 09221040 http://hdl.handle.net/10361/2334 en BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 55 pages application/pdf BRAC University |
| institution |
Brac University |
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Institutional Repository |
| language |
English |
| topic |
Carbon Nanotube Electrical and electronic engineering |
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Carbon Nanotube Electrical and electronic engineering Khan, Sabbir Ahmed Hasan, Mahmudul Characterization of Carbon Nanotube field effect transistor |
| description |
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2012. |
| author2 |
Mominuzzaman, Sharif Mohammad |
| author_facet |
Mominuzzaman, Sharif Mohammad Khan, Sabbir Ahmed Hasan, Mahmudul |
| format |
Thesis |
| author |
Khan, Sabbir Ahmed Hasan, Mahmudul |
| author_sort |
Khan, Sabbir Ahmed |
| title |
Characterization of Carbon Nanotube field effect transistor |
| title_short |
Characterization of Carbon Nanotube field effect transistor |
| title_full |
Characterization of Carbon Nanotube field effect transistor |
| title_fullStr |
Characterization of Carbon Nanotube field effect transistor |
| title_full_unstemmed |
Characterization of Carbon Nanotube field effect transistor |
| title_sort |
characterization of carbon nanotube field effect transistor |
| publisher |
BRAC University |
| publishDate |
2013 |
| url |
http://hdl.handle.net/10361/2334 |
| work_keys_str_mv |
AT khansabbirahmed characterizationofcarbonnanotubefieldeffecttransistor AT hasanmahmudul characterizationofcarbonnanotubefieldeffecttransistor |
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1814307444223901696 |