Complete analytical model of GaN MESFETs for high power and Microwave frequency applications

Complete analytical model of GaN MESFETs for high power and Microwave frequency applications

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2011.

Opis bibliograficzny
Główni autorzy: Shanta, Aysha Siddique, Huq, Tasneem Rumman, Hossain, Daraksha Binte, Mahmood, Riaz
Kolejni autorzy: Islam, Md. Shafiqul
Format: Praca dyplomowa
Język:English
Wydane: BRAC University 2012
Hasła przedmiotowe:
Electrical and electronic engineering
Dostęp online:http://hdl.handle.net/10361/1762

Internet

http://hdl.handle.net/10361/1762

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