Complete analytical model of GaN MESFETs for high power and Microwave frequency applications

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2011.

Opis bibliograficzny
Główni autorzy:	Shanta, Aysha Siddique, Huq, Tasneem Rumman, Hossain, Daraksha Binte, Mahmood, Riaz
Kolejni autorzy:	Islam, Md. Shafiqul
Format:	Praca dyplomowa
Język:	English
Wydane:	BRAC University 2012
Hasła przedmiotowe:	Electrical and electronic engineering
Dostęp online:	http://hdl.handle.net/10361/1762

id	10361-1762
record_format	dspace
spelling	10361-17622019-09-29T05:43:10Z Complete analytical model of GaN MESFETs for high power and Microwave frequency applications Shanta, Aysha Siddique Huq, Tasneem Rumman Hossain, Daraksha Binte Mahmood, Riaz Islam, Md. Shafiqul Electrical and electronic engineering This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2011. Cataloged from PDF version of thesis report. Includes bibliographical references (page 116). In the past few years, growing interest has been paid to the wide band gap materials such as GaN because of its low thermal generation rate and high breakdown field for its potential use in high power, high temperature and microwave frequency applications. The use of GaN based devices for efficient, linear high power RF amplifiers has already been grown for military applications. GaN Metal Semiconductor Field Effect Transistors (MESFETs) have received much attention as its structure is simpler to analyze than that of High Electron Mobility Transistors (HEMTs) and its epi-layers and the physical effects are easier to realize and interpret. Flourishing interest in exploiting the properties and performance of GaN based devices requires the development of simple physics-based analytical models to simplify the device parameter acquisition and to be able to use it for computer-aided design of GaN integrated circuits (ICs). Few analytical models on GaN MESFETs are reported, though significant experimental work is available. Therefore more analytical models should be developed to understand the device operation accurately. In this thesis, analytical one- and two-dimensional channel potential models are developed for long-channel GaN MESFETs based on the solution of Poisson’s equation. The developed analytical channel potential model can be used for short-channel MESFETs with some modifications and assumptions. Analytical models for I-V and C-V characteristics of GaN MESFET are also presented considering the effect of parasitic resistances and gate length modulation. The models evaluate the transconductance and optimum noise figure. The models developed in this thesis will be very helpful to understand the device behaviour in nanometer regime for future applications. 2012-04-08T10:45:43Z 2012-04-08T10:45:43Z 2011 2011-12 Thesis ID 09221146 ID 09221147 ID 09221149 ID 09221074 http://hdl.handle.net/10361/1762 en BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 116 pages application/pdf BRAC University
institution	Brac University
collection	Institutional Repository
language	English
topic	Electrical and electronic engineering
spellingShingle	Electrical and electronic engineering Shanta, Aysha Siddique Huq, Tasneem Rumman Hossain, Daraksha Binte Mahmood, Riaz Complete analytical model of GaN MESFETs for high power and Microwave frequency applications
description	This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2011.
author2	Islam, Md. Shafiqul
author_facet	Islam, Md. Shafiqul Shanta, Aysha Siddique Huq, Tasneem Rumman Hossain, Daraksha Binte Mahmood, Riaz
format	Thesis
author	Shanta, Aysha Siddique Huq, Tasneem Rumman Hossain, Daraksha Binte Mahmood, Riaz
author_sort	Shanta, Aysha Siddique
title	Complete analytical model of GaN MESFETs for high power and Microwave frequency applications
title_short	Complete analytical model of GaN MESFETs for high power and Microwave frequency applications
title_full	Complete analytical model of GaN MESFETs for high power and Microwave frequency applications
title_fullStr	Complete analytical model of GaN MESFETs for high power and Microwave frequency applications
title_full_unstemmed	Complete analytical model of GaN MESFETs for high power and Microwave frequency applications
title_sort	complete analytical model of gan mesfets for high power and microwave frequency applications
publisher	BRAC University
publishDate	2012
url	http://hdl.handle.net/10361/1762
work_keys_str_mv	AT shantaayshasiddique completeanalyticalmodelofganmesfetsforhighpowerandmicrowavefrequencyapplications AT huqtasneemrumman completeanalyticalmodelofganmesfetsforhighpowerandmicrowavefrequencyapplications AT hossaindarakshabinte completeanalyticalmodelofganmesfetsforhighpowerandmicrowavefrequencyapplications AT mahmoodriaz completeanalyticalmodelofganmesfetsforhighpowerandmicrowavefrequencyapplications
_version_	1814307204598071296

Complete analytical model of GaN MESFETs for high power and Microwave frequency applications

Podobne zapisy