Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2012.
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BRAC University
2011
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10361-14552019-09-29T05:43:26Z Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters Mostofa, Jobia Ahmed, Wasi Uddin Pia, Ummay Farha Meghna, Tanzina Haque Islam, Dr. Md.Shafiqul Department of Electrical and Electronic Engineering, BRAC University Electrical and electronic engineering This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2012. Cataloged from PDF version of thesis report. Includes bibliographical references (page 42-43). The Metal- Semiconductor Field-Effect-Transistor (MESFET) is used as a paragon in RF amplifier due to its lower stray capacitance and immense radiation hardness. It is imperative to develop rigorous IN characteristic models for nanometer size MESFETs. Therefore, we consider two types of MESFETs, GaAs and high-power SiC MESFETs. For nanometer size GaAs MESFETs, some existing models will be analyzed and by comparing all these models Ahmed et al. model [1] has been preferred and modified. An algorithm will be developed for the optimization of model parameters to predict the I-V characteristics of nanometer range GaAs MESFETs with different aspect ratios as well as for different bias conditions. The root mean square (RMS) error technique will be used to compare the models . An improved compact nonlinear DC I-V characteristic model will also be delineated for high-power SiC MESFETs . Due to their high thermal conductivity, the SiC devices dissipate larger power resulting an extensive rise in operating temperature . This self heating increases the crystal temperature and commences a negative differential conductance (NDC) because of the change in mobility of the device. An algorithm will also be developed to find out the optimum model parameters using RMS error method. The proposed models will be compared with the experimental results. The proposed models should be a useful tool for upcoming integrated circuits with GaAs and high-power SiC MESFETs. Jabia Mostofa Wasi uddin Ahmed Ummay Farha Pia Tanzina Haque Meghna B. Electrical and Electronic Engineering 2011-11-13T06:17:28Z 2011-11-13T06:17:28Z 2011 2011-08 Thesis ID 09221122 ID 09221145 ID 09221072 ID 09221136 http://hdl.handle.net/10361/1455 en BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 55 pages application/pdf BRAC University |
| institution |
Brac University |
| collection |
Institutional Repository |
| language |
English |
| topic |
Electrical and electronic engineering |
| spellingShingle |
Electrical and electronic engineering Mostofa, Jobia Ahmed, Wasi Uddin Pia, Ummay Farha Meghna, Tanzina Haque Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters |
| description |
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2012. |
| author2 |
Islam, Dr. Md.Shafiqul |
| author_facet |
Islam, Dr. Md.Shafiqul Mostofa, Jobia Ahmed, Wasi Uddin Pia, Ummay Farha Meghna, Tanzina Haque |
| format |
Thesis |
| author |
Mostofa, Jobia Ahmed, Wasi Uddin Pia, Ummay Farha Meghna, Tanzina Haque |
| author_sort |
Mostofa, Jobia |
| title |
Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters |
| title_short |
Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters |
| title_full |
Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters |
| title_fullStr |
Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters |
| title_full_unstemmed |
Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters |
| title_sort |
analysis and development of i-v characteristics models for nanometer size mesfets considering fabrication parameters |
| publisher |
BRAC University |
| publishDate |
2011 |
| url |
http://hdl.handle.net/10361/1455 |
| work_keys_str_mv |
AT mostofajobia analysisanddevelopmentofivcharacteristicsmodelsfornanometersizemesfetsconsideringfabricationparameters AT ahmedwasiuddin analysisanddevelopmentofivcharacteristicsmodelsfornanometersizemesfetsconsideringfabricationparameters AT piaummayfarha analysisanddevelopmentofivcharacteristicsmodelsfornanometersizemesfetsconsideringfabricationparameters AT meghnatanzinahaque analysisanddevelopmentofivcharacteristicsmodelsfornanometersizemesfetsconsideringfabricationparameters |
| _version_ |
1814308228552458240 |