| 000 | 01386nam a2200301 a 4500 | ||
|---|---|---|---|
| 001 | 727583 | ||
| 008 | 100608s1999 nyua b 001 0 eng d | ||
| 010 | _a 98038918 | ||
| 020 | _a0471297003 (cloth : alk. paper) | ||
| 040 |
_aDLC _cDLC _dDLC _dDB-DhAAL |
||
| 082 | 0 | 0 |
_a621.3815/28 _221 |
| 100 | 1 | _aLiu, William. | |
| 245 | 1 | 0 |
_aFundamentals of III-V devices : _bHBTs, MESFETs, and HFETs/HEMTs / _cWilliam Liu. |
| 246 | 3 | _aFundamentals of three-five devices | |
| 260 |
_aNew York : _bWiley, _cc1999. |
||
| 300 |
_axii, 505 p. : _bill. ; _c25 cm. |
||
| 500 | _a"A Wiley-Interscience publication." | ||
| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 | _aBipolar transistors. | |
| 650 | 0 | _aField-effect transistors. | |
| 650 | 0 | _aMetal semiconductor field-effect transistors. | |
| 650 | 0 | _aModulation-doped field-effect transistors. | |
| 999 |
_c8823 _d8823 |
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| 952 |
_p3010018290 _40 _00 _bBRACUL _10 _o621.3815/28 LIU 1999 _d2010-06-08 _t1 _70 _cGEN _2ddc _yBK _aBRACUL |
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| 952 |
_w2010-06-08 _p3010018292 _r2010-06-08 _40 _00 _bBRACUL _10 _o621.3815/28 LIU 1999 _d2010-06-08 _t3 _70 _cGEN _2ddc _yBK _aBRACUL |
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| 952 |
_p3010018291 _40 _00 _bBRACUL _10 _o621.3815/28 LIU 1999 _d2010-06-08 _t2 _70 _cGEN _2ddc _yBK _aBRACUL |
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